Document
XC7SH08
2-input AND gate
Rev. 01 — 1 September 2009 Product data sheet
1. General description
XC7SH08 is a high-speed Si-gate CMOS device. It provides a 2-input AND function.
2. Features
I I I I I I Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays SOT353-1 and SOT753 package options ESD protection: N HBM JESD22-A114E: exceeds 2000 V N MM JESD22-A115-A: exceeds 200 V N CDM JESD22-C101C: exceeds 1000 V I Specified from −40 °C to +125 °C
3. Ordering information
Table 1. Ordering information Package Temperature range XC7SH08GW XC7SH08GV −40 °C to +125 °C −40 °C to +125 °C Name TSSOP5 SC-74A Description plastic thin shrink small outline package; 5 leads; body width 1.25 mm plastic surface-mounted package; 5 leads Version SOT353-1 SOT753 Type number
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
XC7SH08
2-input AND gate
4. Marking
Table 2. Marking codes Marking[1] fE f08 Type number XC7SH08GW XC7SH08GV
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
A 1 2 B A 1 Y 4 2 B
mna113 mna114 mna221
&
4
Y
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
XC7SH08
B A 1 2 5 VCC
GND
3
001aak111
4
Y
Fig 4. Pin configuration SOT353-1 (TSSOP5) and SOT753 (SC-74A)
6.2 Pin description
Table 3. Symbol B A GND Y VCC Pin description Pin 1 2 3 4 5 Description data input data input ground (0 V) data output supply voltage
XC7SH08_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2009
2 of 11
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
XC7SH08
2-input AND gate
7. Functional description
Table 4. Function table H = HIGH voltage level; L = LOW voltage level Inputs A L L H H B L H L H Output Y L L L H
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC VI IIK IOK IO ICC IGND Tstg Ptot
[1] [2]
Parameter supply voltage input voltage input clamping current output clamping current output current supply current ground current storage temperature total power dissipation
Conditions
Min −0.5 −0.5
Max +7.0 +7.0 ±20 ±25 75 +150 250
Unit V V mA mA mA mA mA °C mW
VI < −0.5 V VO < −0.5 V or VO > VCC + 0.5 V −0.5 V < VO < VCC + 0.5 V
[1]
−20 −75 −65
Tamb = −40 °C to +125 °C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For both TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
XC7SH08_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2009
3 of 11
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
XC7SH08
2-input AND gate
9. Recommended operating conditions
Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC VI VO Tamb ∆t/∆V supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Conditions Min 2.0 0 0 −40 Typ 5.0 +25 Max 5.5 5.5 VCC +125 100 20 Unit V V V °C ns/V ns/V
10. Static characteristics
Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter VIH HIGH-level input voltage Conditions Min VCC = 2.0 V VCC = 3.0 V VCC = 5.5 V VIL LOW-level input voltage VCC = 2.0 V VCC = 3.0 V VCC = 5.5 V VOH HIGH-level VI = VIH or VIL output voltage IO = −50 µA; VCC = 2.0 V IO = −50 µA; VCC = 3.0 V IO = −50 µA; VCC = 4.5 V IO = −4.0 mA; VCC = 3.0 V IO = −8.0 mA; VCC = 4.5 V VOL LOW-level VI = VIH or VIL output voltage IO = 50 µA; VCC = 2.0 V IO = 50 µA; VCC = 3.0 V IO = 50 µA; VCC = 4.5 V IO = 4.0 mA; VCC = 3.0 V IO = 8.0 mA; VCC = 4.5 V II ICC CI input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V 1.5 2.1 3.85 1.9 2.9 4.4 2.58 3.94 25 °C Typ 2.0 3.0 4.5 0 0 0 1.5 Max 0.5 0.9 1.65 0.1 0.1 0.1 0.36 0.36 0.1 1.0 10 −40 °C to +85 °C −40 °C to +125 °C Unit Min 1.5 2.1 3.85 1.9 2.9 4.4 2.48 3.8 0.5 0.9 1.65 0.1 0.1 0.1 0.44 0.44 1.0 10 10 Max Min 1.5 2.1 3.85 1.9 2.9 4.4 2.40 3.70 0.5 0.9 1.65 0.1 0.1 0.1 0.55 0.55 2.0 40 10 Max V V V V V V V V V V V V V V V V µA µA pF
supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V input capacitance
XC7SH08_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2009
4 of 11
Free Datasheet http://www.datasheet4u.com/
NXP Semiconductors
XC7SH08
2-input AND gate
11. Dynamic characteristics
Table 8. Dynamic characteristics GND = 0 V. For test circuit see Figure 6. Symbol tpd Parameter propagation delay Conditions Min A and B to Y; see Figure 5 VCC = 3.0 V to 3.6 V CL = 15 pF CL = 50 pF VCC = 4.5 V to 5.5 V CL = 15 pF CL = 50 pF CPD power dissipation capacitance per buffer; CL = 50 pF; f = 1 MHz; VI = GND to VCC
[4] [3] [1]
25 °C Typ Max
−40 °C to +85 °C −40 °C to +125 °C Unit Min Max Min Max
[2]
-
4.6 6.5 3..