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SZESD9B Dataheets PDF



Part Number SZESD9B
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description ESD Protection Diode
Datasheet SZESD9B DatasheetSZESD9B Datasheet (PDF)

ESD9B, SZESD9B ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD9B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. www.onsemi.com Specification Fea.

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ESD9B, SZESD9B ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD9B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. www.onsemi.com Specification Features • Low Capacitance 15 pF • Low Clamping Voltage • Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0mm x 0.60mm) • Low Body Height: 0.016″ (0.4 mm) • Stand−off Voltage: 3.3 V, 5 V • Low Leakage • Response Time is < 1 ns • IEC61000−4−2 Level 4 ESD Protection • AEC−Q101 Qualified and PPAP Capable • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • This is a Pb−Free Device Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000−4−2 (ESD) Contact Air ±18 kV ±18 IEC 61000−4−4 (EFT) 40 A Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) °PD° RqJA TJ, Tstg TL 300 mW 400 °C/W −55 to +150 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.62 in. SOD−923 CASE 514AB MARKING DIAGRAM XM X = Specific Device Code M Date Code ORDERING INFORMATION Device Package Shipping† ESD9B3.3ST5G SOD−923 8000/Tape & Reel (Pb−Free) ESD9B5.0ST5G SOD−923 8000/Tape & Reel (Pb−Free) SZESD9B5.0ST5G SOD−923 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 1 November, 2017 − Rev. 6 Publication Order Number: ESD9B/D ESD9B, SZESD9B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP VC VRWM IR VBR IT C Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Capacitance @ VR = 0 V and f = 1.0 MHz I IPP VC VBR VRWM IIRT IIRT VRWM VBR VC V IPP Bi−Directional ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VRWM IR (nA) VBR (V) @ IT (V) @ VRWM (Note 2) IT C (pF) VC VC (V) Max Per 8 x 20 ms (Note 4) Device Device Marking Max Max Min Max mA Typ Per IEC61000−4−2 (Note 3) IPP = 1.


SC34063A SZESD9B Z7M132-RN-10


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