KC857C

SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 Ideally suited for automatic insertion 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter KC856 Collector-Base Voltage KC857 KC858 KC856 Collector-Emitter Voltage KC857 KC858 Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VEBO IC PC TJ Tstg VCEO VCBO Symbol Rating -80 -50 -30 -65 -45 -30 -5 -0.1 200 150 -65 to +150 V A mW V V Unit +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) Symbol KC856 Collector-base breakdown voltage KC857 KC858 KC856 Collector-emitter breakdown voltage KC857 KC858 Emitter-base breakdown voltage KC856 Collector cut-off current KC857 KC858 KC856 Collector cut-off current KC857 KC858 Emitter cut-off current KC856A, 857A,858A DC current gain KC856B, 857B,858B KC857C,KC858C Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance Transition frequency VCE(sat) IC=-100mA, IB= -5 mA VBE(sat) IC= -100 mA, IB= -5mA Cob fT VCB=-10V,f=1MHz VCE= -5 V, IC= 10mA,f=100MHz 100 hFE VCE= -5V, IC= -2mA IEBO ICEO ICBO VEBO IE= -10ìA, I...