SI1557DH

Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 FEATURES rDS(on) (W) 0.235 @ VGS = 4.5 V 0.280 @ VGS = 2.5 V 0.340 @ VGS = 1.8 V 0.535 @ VGS = -4.5 V ID (A) 1.3 1.2 1.0 -0.86 -0.67 -0.56 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package D Fast Switching to Minimize Gate and Switching Losses APPLICATIONS D Baseband DC/DC Converter Switch for Portable Electronics P-Channel -12 0.880 @ VGS = -2.5 V 1.26 @ VGS = -1.8 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code EC G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.5 0.6 0.3 P-Channel 5 secs Steady State -12 "8 V - 0.86 -0.62 -2 -0.77 -0.55 A -0.39 0.47 0.25 W _C Symbol VDS VGS 5 secs Steady State 12 Unit 1.3 0.9 3 1.2 0.8 0.39 0.47 0.25 -55 to 150 -0.5 0.6 0.3 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71944 S-21684—Rev. B, 30-Sep-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 170 220 1...