SSM9934GM

SSM9934GM 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY P2G N-CH BVDSS RDS(ON) N2G N1S/N2S N1D/P1D 35V 48mΩ 4.3A -35V 72mΩ -3.6A Simple Drive Requirement Low On-resistance Full Bridge Application on LCD Monitor Inverter N2D/P2D P1S/P2S P1G ID P-CH BVDSS RDS(ON) ID P1S P1G P2S SO-8 N1G DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. P2G P1N1D P2N2D N1G N1S N2S N2G Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ± 20 4.3 3.4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -35 ± 20 -3.6 -2.8 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W 09/13/2007 Rev.1.00 www.SiliconStandard.com 1 Free Datasheet http://www.datasheet4u.com/ SSM9934GM N-CH ELECTRICAL CHARACTERISTICS @Tj=25 C (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Para...