AOK29S50
500V 29A α MOS TM Power Transistor
General Description
Product Summary
The AOK29S50 has been fabricated usin...
AOK29S50
500V 29A α MOS TM Power
Transistor
General Description
Product Summary
The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
Top View TO-247
600V 120A 0.15Ω 26.6nC 6.3µJ
D
AOK29S50
DS G
Orderable Part Number
Package Type
AOK29S50L
TO-247 Green
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RθJA RθCS
Maximum Junction-to-Case
RθJC
G S
Form Tube
AOK29S50 500 ±30 29 18 120 7.5 110 608 357 2.9 100 20
-55 to 150
300
AOK29S50 40 0.5 0.35
Minimum Order Quantity 240
Units V V
A
A mJ mJ W W/ oC V/ns °C
°C...