2N5059

2N5058 2N5059 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5058 and 2N5059 are silicon NPN epitaxial planar transistors designed for high voltage general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg JA JC 2N5058 300 2N5059 250 300 250 7.0 6.0 150 1.0 5.0 -65 to +200 150 30 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5058 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=100V - 50 ICBO VCB=100V, TA=125°C - 20 IEBO VEB=5.0V - 10 BVCBO IC=100μA 300 - BVCEO IC=30mA 300 - BVEBO IE=100μA 7.0 - VCE(SAT) IC=30mA, IB=3.0mA - 1.0 VBE(SAT) IC=30mA, IB=3.0mA - 0.85 VBE(O...