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HER806G

Taiwan Semiconductor

(HER801G - HER808G) Glass Passivated High Efficient Rectifiers

HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. Hig...


Taiwan Semiconductor

HER806G

File Download Download HER806G Datasheet


Description
HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Case: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guaranteed: o 260 C/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Mounting position: Any Weight: 1.65 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length o @TA = 55 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 8.0A Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance Operating Temperature Range ( Note 2 ) Symbol HER HER HER HER HER HER HER HER VRRM VRMS VDC I(AV) IFSM VF IR...




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