2N5031

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1303.PDF 10-25-99 2N5031 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) 10 15 3.0 Value Typ. 1.0 Max. 10 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) 25 300 - DYNAMIC Symbol fT CCB Test Conditions Min. Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) Output Capacitance (IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz) 1200 Value Typ. 2.5 Max. 2500 Unit MHz dB MSC1303.PD...