2N4930

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Sym VCEO VCBO VEBO IC PT TJ, Tstg 2N3743 2N4930 2N4931 Unit 300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C Unit C/W @TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max. 35 0 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 1.0 mAdc 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 V(BR)CEO 300 200 250 300 200 250 5.0 250 250 250 Vdc Collector-Emitter Breakdown Voltage IC = 100 µAdc V(BR)CBO Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc V(BR)EBO 2N3743 2N4930 2N4931 Vdc ICBO ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3743, 2N4930, 2N4931, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 4.0 Vdc Symbol IEB...