SZM-2166Z

Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 2.3-2.7 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. SZM-2166Z 2.3-2.7GHz 2W Power Amplifier Pb RoHS Compliant & Green Package 6mm x 6mm QFN Package Functional Block Diagram Vcc = 5V RFIN RFOUT Product Features P1dB = 35dBm @ 6V Three Stages of Gain: 37dB 802.11g 54Mb/s Class AB Performance Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA Active Bias with Adjustable Current On-chip Output Power Detector Low Thermal Resistance Power up/down control < 1μs Attenuator step 20dB @ Vpc2 = 0V Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias Applications P ower Up/Dow n Contr...