FUJITSU MICROELECTRONICS DATA SHEET
DS05-13108-4E
Memory FRAM
CMOS
2 M Bit (128 K × 16)
MB85R2002
■ DESCRIPTIONS
The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2002 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
• • • • • • • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 131,072 words × 16 bits : 1010 times/bit : 3.0 V to 3.6 V : −40 °C to +85 °C : 10 years (+55 °C) : .