MB85R2001

FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit (256 K × 8) MB85R2001 ■ DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2001 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V : − 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2007-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 Free Datasheet http://www.datasheet4u.com/ MB85R2001 ■ PIN ASSIGNMENTS (TOP VIEW) A11 A9 NC A8 A13 WE CE2 A15 NC VCC NC NC GND NC NC VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 OE NC GND A10 CE1 NC I/O8 I/O7 I/O6 I/O5 I/O4 VCC NC I/O3 I/O2 I/O1 NC NC NC A0 A1 GND A2 A3 (FPT-48P-M25) ■ PIN DESCRIP...