DatasheetsPDF.com

NTD12N10 Dataheets PDF



Part Number NTD12N10
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTD12N10 DatasheetNTD12N10 Datasheet (PDF)

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATING.

  NTD12N10   NTD12N10


Document
NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA =100°C − Pulsed (Note 3) Symbol VDSS VDGR VGS VGSM ID ID Value 100 100 ± 20 ± 30 12 7.0 36 56.6 0.38 1.76 1.28 − 55 to +175 75 Unit Vdc Vdc Vdc Vpk Adc Apk W W/°C W W °C mJ 1 °C/W 2 3 1 2 3 4 G S MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain DPAK CASE 369C (Surface Mount) STYLE 2 YWW T12 N10G 4 Drain DPAK CASE 369D (Straight Lead) STYLE 2 YWW T12 N10G 1 2 3 Gate Drain Source Y WW T12N10 G = Year = Work Week = Device Code = Pb−Free Package Free Datasheet http://www.datasheet4u.com/ IDM PD Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction to Case − Junction to Ambient (Note 1) − Junction to Ambient (Note 2) Maximum Temperature for Soldering Purposes, 1/8 in from case for 10 seconds 2 1 3 Drain Gate Source TJ, Tstg EAS 4 RqJC RqJA RqJA TL 2.65 85 117 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 8 1 Publication Order Number: NTD12N10/D NTD12N10 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 6.0 Adc) (VGS = 10 Vdc, ID = 6.0 Adc, TJ = 125°C) Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 12 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge BODY−DRAIN DIODE RATINGS (Note 4) Diode Forward On−Voltage Reverse Recovery Time (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) VSD trr ta tb QRR − − − − − − 0.95 0.80 85 60 28 0.3 1.0 − − − − − mC Vdc ns (VDS = 80 Vdc, ID = 12 Adc, VGS = 10 Vdc) (VDD = 80 Vdc, ID = 12 Adc, VGS = 10 Vdc, RG = 9.1 W) (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss td(on) tr td(off) tf Qtot Qgs Qgd − − − − − − − − − − 390 115 35 11 30 22 32 14 3.0 7.0 550 160 70 20 60 40 60 20 − − nC ns pF VGS(th) 2.0 − − − − − 3.1 −7.5 0.130 0.250 1.62 7.0 4.0 − 0.165 0.400 2.16 − Vdc mV/°C W V(BR)DSS 100 − − − − − 135 − − − − − 5.0 50 ± 100 Vdc mV/°C mAdc Symbol Min Typ Max Unit IDSS IGSS nAdc RDS(on) VDS(on) gFS Vdc mhos SWITCHING CHARACTERISTICS (Notes 4 & 5) Reverse Recovery Stored Charge 4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD12N10G NTD12N10−1G NTD12N10T4G Package DPAK (Pb−Free) DPAK−3 (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units/Rail 75 Units/Rail 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 Free Datasheet http://www.datasheet4u.com/ NTD12N10 TYPICAL ELECTRICAL CHARACTERISTICS 24 ID, DRAIN CURRENT (AMPS) 20 16 12 8 4 0 0 5.5 V 5V 4.5 V 8 9 1 2 3 4 5 6 7 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 VGS = 10 V 9V 8V .


NTD18N06 NTD12N10 NSS40300MDR2G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)