NVMFS4841N

NVMFS4841N Power MOSFET Features 30V, 7 mW, 89A, Single N−Channel SO8FL Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices* http://onsemi.com V(BR)DSS 30 V Value 30 "20 89 63 Unit V V A RDS(ON) MAX 7.0 mW @ 10 V 11.4 mW @ 4.5 V ID MAX 89 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms TA = 25°C IDM IDmaxPkg TJ, Tstg IS EAS PD ID PD Symbol VDSS VGS ID D (5,6) 112 56 16 11 3.7 1.8 336 80 − 55 to 175 51 180 W A G (4) S (1,2,3) N−CHANNEL MOSFET W A A 1 MARKING DIAGRAM D S S S G V4841 AYWWG G D D Current limited by package (Note 4) Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL(pk) = 19 A, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) °C A mJ SO−8 FLAT LEAD CASE 488AA STYLE 1 D TL 260 °C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either loc...