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33N25
FDB33N25
Description
FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect
transistor
s are prod...
Fairchild Semiconductor
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