UT4957

UNISONIC TECHNOLOGIES CO., LTD UT4957 P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 24mΩ @ VGS=-10V, ID=-7A * RDS(ON) ≤ 36mΩ @ VGS=-4.5V, ID=-5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4957L-S08-R UT4957G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-279.C UT4957 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -7.7 A Pulsed Drain Current (Note 2) IDM -30 A Power Dissipation TA=25°C PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX)  THERMAL DATA PARAMETER SYMBOL RATINGS Junction-to-Ambient θJA 62.5 (Note) ...