N-Channel Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT4446
15A, 30V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UT4446 is an ...
Description
UNISONIC TECHNOLOGIES CO., LTD UT4446
15A, 30V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC UT4446 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
The UTC UT4446 is generally applied in low power switching mode power appliances and electronic ballast.
FEATURES
* RDS(ON) ≤ 7.8 mΩ @ VGS=10V, ID=12A RDS(ON) ≤ 13 mΩ @ VGS=4.5V, ID=9.0A
* High Switching Speed * Improved dv/dt capability
SYMBOL
SOP-8 1
PDFN3×3
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UT4446L-S08-R
UT4446G-S08-R
SOP-8
UT4446L-P3030-R
UT4446G-P3030-R
PDFN3×3
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12345678
Packing
S S S G D D D D Tape Reel
S S S G D D D D Tape Reel
www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-251.E
UT4446
MARKING
SOP-8
Power MOSFET
PDFN3×3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-251.E
UT4446
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
15
A
Pulsed Drain Current (Note 2)
IDM
40
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
7.2
mJ
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
SOP-8 PDFN3×3
PD
1.38
W
1.66
W
Junction Temperature
TJ
+150
°...
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