UT4430

UNISONIC TECHNOLOGIES CO., LTD UT4430 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION Power MOSFET The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. „ FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON)<5.5mΩ@VGS=10V * RDS(ON)<7.5mΩ@VGS=4.5V * Halogen-Free „ SYMBOL Drain Gate Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4430L-S08-R UT4430G-S08-R Package SOP-8 Packing Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-333.A Free Datasheet http://www.datasheet4u.com/ UT4430 „ PIN CONFIGURATION Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-333.A Free Datasheet http://www.datasheet4u.com/ UT4430 „ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Ta=25°C) (Note 2) t≤10s ID 18 A Pulsed Drain Current (Note 3) IDM 80 A Avalanche Current (Note 3) IAR 30 A Repetitive avalanche energy (Note 3) L=0.3mH EAR 135 mJ Power Dissipation (Ta=25°C) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings ...