UT4411

UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Drain Power MOSFET Gate Source  ORDERING INFORMATION Ordering Number UT4411G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-191.D UT4411 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -8 A Pulsed Drain Current IDM -40 A Power Dissipation PD 3 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL MIN TYP θJA 54  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) MAX 75 UNIT °C/W PARAMETER SYMBOL ...