HSC226
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0599-0300 Rev.3.00 Sep 15, 2006
Features
• Low rev...
HSC226
Silicon
Schottky Barrier Diode for High Speed Switching
REJ03G0599-0300 Rev.3.00 Sep 15, 2006
Features
Low reverse current, Low capacitance. Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC226 Cathode Mark S4 Package Name UFP Package Code PWSF0002ZA-A
Pin Arrangement
Cathode mark Mark 1
S4
2 1. Cathode 2. Anode
Rev.3.00 Sep 15, 2006 page 1 of 4
Free Datasheet http://www.datasheet4u.com/
HSC226
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Note: 10 ms Sine wave 1 pulse Symbol VRRM IFSM * IF Tj Tstg Value 25 200 50 125 −55 to +125 Unit V mA mA °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Symbol VF1 VF2 IR C Min — — — — Typ — — — — Max 0.33 0.38 450 2.80 Unit V nA pF Test Condition IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz
Rev.3.00 Sep 15, 2006 page 2 of 4
Free Datasheet http://www.datasheet4u.com/
HSC226
Main Characteristic
101 100 10-1
Forward current IF (A)
10-4 Pulse test Ta=75°C
10-2 10-3 10 10 10
-4 -5 -6
Ta=25°C
Reverse current IR (A)
Ta=75°C
10-5
10-6 Ta=25°C 10-7
10-7 10-8 0 0.2 0.4 0.6 0.8 1.0 10-8 0 10 20 30 40
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz
10
Capacitance C (pF)
1.0
0.1 0.1 1.0 Reverse ...
