SMD Type
Silicon Schottky Barrier Diode HSC226
Diodes
SOD-523
+0.05 0.3-0.05 +0.1 1.2-0.1
Unit: mm
+0.1 0.6-0.1
Low ...
SMD Type
Silicon
Schottky Barrier Diode HSC226
Diodes
SOD-523
+0.05 0.3-0.05 +0.1 1.2-0.1
Unit: mm
+0.1 0.6-0.1
Low reverse current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.05 0.8-0.05
Features
+
-
+0.1 1.6-0.1
0.77max
0.07max
Absolute M axim um Ratings Ta = 25
Param eter Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction tem perature Storage tem perature Note 10m s Sinewave 1pulse Sym bol V RRM I FSM * IF Tj T stg Value 25 200 50 125 -55 to +125 Unit V mA mA
Electrical Characteristics Ta = 25
Param eter Forward voltage Reverse current Capacitance Sym bol VF IR C Conditions IF = 1 m A IF = 5 m A V R = 20 V V R =1 V, f = 1 M Hz M in Typ M ax 0.33 0.38 0.45 2.80 A pF Unit V
Marking
Marking S4
+0.05 0.1-0.02
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