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HSB88YP

Hitachi

Silicon Schottky Barrier Diode

HSB88YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-932A (Z) Rev. 1 Sep. 2000 Features • Low revers...


Hitachi

HSB88YP

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HSB88YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-932A (Z) Rev. 1 Sep. 2000 Features Low reverse current, Low capacitance. CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB88YP Laser Mark C1 Package Code CMPAK-4 Pin Arrangement 4 3 4 3 C1 1 (Top View) 2 1 (Top View) 1 2 3 4 Anode Anode Cathode Cathode 2 Free Datasheet http://www.datasheet4u.com/ HSB88YP Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device. Symbol VR IO * Tj Tstg Value 10 15 125 −55 to +125 Unit V mA °C °C Electrical Characteristics *1 (Ta = 25°C) Item Forward voltage Symbol Min VF1 VF2 Reverse current IR1 IR2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability * 2 Typ Max Unit Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. 0.350  0.500       30       0.420 V 0.580 0.2 10 0.80 0.10 10  pF pF mV V µA C ∆C ∆VF  Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2 V Rev.1, Sep. 2000, page 2 of 5 Free Datasheet http://www.datasheet4u.com/ HSB88YP Main Characteristic 10 -2 10 -6 (A) 10 -4 Reverse current IR (A) 10 -3 10 -7 Ta= 75°C Forward current IF 10 -8 Ta= - 25°C Ta= 25°C 10 -5 Ta= 25°C Ta= 75°C 10 -9 10 -6 ...




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