HSB88AS
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0586-0100 (Previous: ADE-208-964) Rev.1.00 Mar 31,...
HSB88AS
Silicon
Schottky Barrier Diode for High Speed Switching
REJ03G0586-0100 (Previous: ADE-208-964) Rev.1.00 Mar 31, 2005
Features
Low reverse current, Low capacitance. CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB88AS Laser Mark C1 Package Name CMPAK Package Code (Previous Code) PTSP0003ZB-A (CMPAK)
Pin Arrangement
3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2
2 1 (Top View)
Rev.1.00 Mar 31, 2005 page 1 of 4
Free Datasheet http://www.datasheet4u.com/
HSB88AS
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device. VR IO * Tj
1
Symbol
Value 10 15 125 −55 to +125
Unit V mA °C °C
Tstg
Electrical Characteristics *1
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation 2 ESD-Capabilityme * Symbol VF1 VF2 IR1 IR2 C ∆C ∆VF — Min 0.350 0.500 — — — — — 30 Typ — — — — — — — — Max 0.420 0.580 0.2 10 0.80 0.10 10 — Unit V µA pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse.
Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2V
Rev.1.00 Mar 31, 2005 page 2 of 4
Free Datasheet http://www.datasheet4u.com/
HSB88AS
Main Characteristic
10-2 10-5
Reverse current I R (A)
(A)
10-3
10-6 Ta = 75°C 10-7
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