HSB276S

HSB276S Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0133-0100Z (Previous: ADE-208-780) Rev.1.00 Nov.10.2003 Features High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB276S Laser Mark C2 Package Code CMPAK Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00, Nov.10.2003, page 1 of 4 Free Datasheet http://www.datasheet4u.com/ HSB276S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VR IO Tj Tstg *1 Value 3 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics *‚P (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability Note: *2 Symbol VR IR IF C ∆C — Min 3 — 35 — — 30 Typ — — — — — — Max — 50 — 0.9 0.1 — Unit V µA mA pF pF V Test Condition IR = 1 mA VR = 0.5 V VF = 0.5 V VR = 0.5 V, f = 1 MHz VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. 1. Per one device 2. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V Rev.1.00, Nov.10.2003, page 2 of 4 Free Datasheet http://www.datasheet4u.com/ HSB276S Main Characteristics 10–1 10–2 10–3 Reverse current IR (A) Forward current IF (A) 10–2 10–3 10–4 10–4 ...