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HRW0703A

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Silicon Schottky Barrier Diode

HRW0703A Silicon Schottky Barrier Diode for Rectifying REJ03G0160-0600Z (Previous: ADE-208-110E) Rev.6.00 Jan.06.2004 F...


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HRW0703A

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HRW0703A Silicon Schottky Barrier Diode for Rectifying REJ03G0160-0600Z (Previous: ADE-208-110E) Rev.6.00 Jan.06.2004 Features Low forward voltage drop and suitable for high efficiency rectifying. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0703A Laser Mark S8 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. NC 2. Anode 3. Cathode Rev.6.00, Jan.06.2004, page 1 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0703A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.7. 2. 50 Hz sine wave 1 pulse Symbol VRRM * IF * Tj Tstg 1 1 Value 30 700 Unit V mA A °C °C IFSM * 2 5 125 –55 to +125 Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth1(j-a) Rth2(j-a) Notes: 1. Polyimide board 20h×15w×0.8t 1.5 Min — — — — — Typ — — 150 390 290 Max 0.5 100 — — — Unit V µA pF °C/W °C/W Test Condition IF = 700 mA VR = 30 V VR = 0 V, f = 1 MHz Polyimide board *1 Ceramic board *2 3.0 1.5 1.5 0.8 Unit: mm 2. Ceramic board 20h×15w×0.65t 4.2 2.0 2.0 Unit: mm Rev.6.00, Jan.06.2004, page 2 of 5 Free Datasheet http://www.datasheet4u.com/ HRW0703A Main Characteristic 10 Pulse test 10–2 10–1 Pulse test Forward current IF (A) 1.0 Ta = 75°C Reverse current IR (A) 10–3 T...




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