DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N4401 NPN switching transistor
Product specification Superse...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N4401
NPN switching
transistor
Product specification Supersedes data of 1997 May 07 1999 Apr 23
Philips Semiconductors
Product specification
NPN switching
transistor
FEATURES High current (max. 600 mA) Low voltage (max. 40 V). APPLICATIONS Industrial and consumer switching applications. DESCRIPTION
NPN switching
transistor in a TO-92; SOT54 plastic package.
PNP complement: 2N4403.
1 handbook, halfpage
2N4401
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
2 3
1 2 3
MAM279
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 600 800 200 630 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN switching
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-...