Document
A1 K
A2
K
A2 K A1
TO-220AB
K K
A2
A1
D²PAK
A2 A1
Features
Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capability specified High frequency operation ECOPACK®2 compliant component (on
demand for D²PAK)
STPS2545C
Power Schottky rectifier
Datasheet - production data
Description
Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.
This device is especially intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
Table 1: Device summary
Symbol
Value
IF(AV) VRRM Tj(max.) VF(typ.)
2 x 12.5 A 45 V
175 °C 0.5 V
May 2017
DocID8736 Rev 5
This is information on a product in full production.
1/11
www.st.com
Characteristics
STPS2545C
1
Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current δ = 0.5, square wave
TC = 160 °C TC = 155 °C
Per diode Per device
12.5 25
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
PARM Tstg Tj
Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Storage temperature range Maximum operating junction temperature (1)
345
W
-65 to +175 °C
175
°C
Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c) Rth(c)
Junction to case Coupling
Table 3: Thermal parameters Parameter Per diode Total
Max. value 1.6 1.1 0.6
Unit °C/W °C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4: Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) VF(1)
Reverse leakage current Forward voltage drop
Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C
VR = VRRM IF = 12.5 A IF = 25 A
-
125 µA
-
9
25 mA
- 0.50 0.57
-
0.84 V
- 0.65 0.72
Notes: (1)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation: P = 0.42 x IF(AV) + 0.012 x IF2(RMS)
2/11
DocID8736 Rev 5
STPS2545C
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average current, per diode)
Characteristics
Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode)
10 PF(AV)(W)
9
8
7
6
5
4
3
2
1
0
0.0
2. 5
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5 δ =1
T
IF(AV) (A)
δ = tp/T
tp
5.0
7. 5
10.0
12.5
15.0
14
Rt h(j-a)=Rth(j-c)
12
10
8
6
Rth(j-a)= 50° C/W
4 T
2
δ =tp/T
tp
0
0
25
50
Tamb (°C)
75
100
125
150
175
Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C)
PARM(t p ) 1 PARM(10 µs)
0.1
0.01
0.001 1
t p(µs)
10
100
1000
Figure 4: Relative variation of thermal impedance junction to cas.