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STPS2545C Dataheets PDF



Part Number STPS2545C
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power Schottky rectifier
Datasheet STPS2545C DatasheetSTPS2545C Datasheet (PDF)

A1 K A2 K A2 K A1 TO-220AB K K A2 A1 D²PAK A2 A1 Features  Very small conduction losses  Negligible switching losses  Extremely fast switching  Low thermal resistance  Avalanche capability specified  High frequency operation  ECOPACK®2 compliant component (on demand for D²PAK) STPS2545C Power Schottky rectifier Datasheet - production data Description Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. This device is esp.

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A1 K A2 K A2 K A1 TO-220AB K K A2 A1 D²PAK A2 A1 Features  Very small conduction losses  Negligible switching losses  Extremely fast switching  Low thermal resistance  Avalanche capability specified  High frequency operation  ECOPACK®2 compliant component (on demand for D²PAK) STPS2545C Power Schottky rectifier Datasheet - production data Description Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Table 1: Device summary Symbol Value IF(AV) VRRM Tj(max.) VF(typ.) 2 x 12.5 A 45 V 175 °C 0.5 V May 2017 DocID8736 Rev 5 This is information on a product in full production. 1/11 www.st.com Characteristics STPS2545C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TC = 160 °C TC = 155 °C Per diode Per device 12.5 25 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 A PARM Tstg Tj Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Storage temperature range Maximum operating junction temperature (1) 345 W -65 to +175 °C 175 °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Symbol Rth(j-c) Rth(c) Junction to case Coupling Table 3: Thermal parameters Parameter Per diode Total Max. value 1.6 1.1 0.6 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) VF(1) Reverse leakage current Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 12.5 A IF = 25 A - 125 µA - 9 25 mA - 0.50 0.57 - 0.84 V - 0.65 0.72 Notes: (1)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.42 x IF(AV) + 0.012 x IF2(RMS) 2/11 DocID8736 Rev 5 STPS2545C 1.1 Characteristics (curves) Figure 1: Conduction losses versus average current, per diode) Characteristics Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode) 10 PF(AV)(W) 9 8 7 6 5 4 3 2 1 0 0.0 2. 5 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ =1 T IF(AV) (A) δ = tp/T tp 5.0 7. 5 10.0 12.5 15.0 14 Rt h(j-a)=Rth(j-c) 12 10 8 6 Rth(j-a)= 50° C/W 4 T 2 δ =tp/T tp 0 0 25 50 Tamb (°C) 75 100 125 150 175 Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C) PARM(t p ) 1 PARM(10 µs) 0.1 0.01 0.001 1 t p(µs) 10 100 1000 Figure 4: Relative variation of thermal impedance junction to cas.


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