(7 0 Ω ) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 –110 –110 –5 –6 –1 30(Tc...
(7 0 Ω ) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1626 –110 –110 –5 –6 –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
2SB1626
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.5A VCB=–10V, f=1MHz 2SB1626 –100max –100max –110min 5000min∗ –2.5max –3.0max 100typ 110typ V V
13.0min
B
Equivalent circuit
C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD2495)
Application : Audio, Series
Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
16.9±0.3
V
8.4±0.2
µA
MHz pF
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.1typ tstg (µs) 3.2typ tf (µs) 1.1typ
2.54
3.9 B C E
I C – V CE Characteristics (Typical)
A m –1
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) –3
I C – V BE Temperature Characteristics (Typical)
–6 (V C E =–4V)
–6
A –5m
–0
.
5m
A
.4 –0
mA
–0 .3 m A
Collector Current I C (A)
–0. 2m A
–4
Collector Current I C (A)
–2
–5A
–4
Tem
(Ca
se T
se
–2
–1
–2
˚C
(Ca
25˚C
125
0
0
–2
–4
–6
0 –0.1
...
