2SK3676-01S

2SK3676-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 900 900 ±6 ±24 ±30 6 244 40 5 1.67 195 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=12.4mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph < DSS, Tch=150°C < *4 VDS < *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV = 900V < *2 Tch=150°C *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche ...