2SK3605-01

2SK3605-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID Tc=25°C Ta=25°C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25°C Ta=25°C Ratings 150 120 ±23 ±3.1 ** ±92 ±30 23 130.9 20 5 105 2.4 ** +150 Unit V V A A A V A mJ kV/µs kV/µs W Foot Print Pattern Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Operating and storage Tch °C temperature range Tstg -55 to +150 °C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=363µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = BVDSS, Tch < = 150°C *4 VDS < = -ID, -di/dt=50A/µs, Vcc < = 150V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output cap...