2N4351

2N4351 Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Body Drain to Source Peak Gate to Source2 25V 25V ±125V 100mA * Body tied to Case. 375mW -65 to +200 °C -55 to +150 °C 1 N-CHANNEL MOSFET ENHANCEMENT MODE ID = 100mA gfs = 1000µS TO-72 BOTTOM VIEW G 2 3 D S 1 4 C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL BVDSS VDS(on) VGS(th) IGSS IDSS ID(on) gfs rDS(on) Crss Ciss Cdb CHARACTERISTIC Drain to Source Breakdown Voltage Drain to Source "On" Voltage Gate to Source Threshold Voltage Gate Leakage Current Drain Leakage Current "Off" Drain Current "On" Forward Transconductance Drain to Source "On" Resistance Reverse Transfer Capacitance Input Capacitance Drain to Body Capacitance 3 1000 300 1.3 5.0 5.0 pF 1 MIN 25 1 5 10 10 pA nA mA µS Ω V TYP MAX UNITS CONDITIONS ID = 10µA, VGS = 0V ID = 2mA, VGS = 10V VDS = 10V, ID = 10µA VGS = ±30V, VDS = 0V VDS = 10V, VGS = 0V VGS = 10V, VDS = 10V VDS = 10V, ID = 2mA, f = 1MHz VGS = 10V, ID = 0A, f = 1kHz VDS = 0V, VGS = 0V, f = 140kHz VDS = 10V, VGS = 0V, f = 140kHz VDB = 10V, f = 140kHz Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax...