VSLB9530S

VSLB9530S www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES Package type: leaded Package form: TELUX Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6 Peak wavelength: λp = 940 nm High reliability High radiant power High radiant intensity Angle of half intensity, vertical: ϕv = ± 18° Angle of half intensity, horizontal: ϕh = ± 36° 19232 Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz DESCRIPTION VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. It is molded in a clear high power TELUX package with an oval lens resulting in angle of half intensities in vertical direction of ± 18° and in horizontal direction of ± 36°. Good spectral matching with Si photodetectors Compatible with wave solder processes according to CECC 00802 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Emitter source for gesture recognition applications Emitter source for 3D TV Emitter source for mid range proximity detection Emitter source for object/presence detection PRODUCT SUMMARY COMPONENT VSLB9530S Ie (mW/sr) 60 ϕv (deg) ± 18 ϕh (deg) ± 36 λp (nm) 940 tr (ns) 15 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE VSLB9530S Note MOQ: minimum order quantity PACKAGING Tube REMA...