TTC007

TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 High-Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 400 to1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) High-speed switching : tf = 85 ns (typ.) TTC007 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current DC IC Pulse ICP 1 A 2 1. BASE 2. EMITTER 3. COLLECTOR Base current IB 0.1 A t = 10 s PC Collector power dissipation 1.1 W DC (Note 1) 0.7 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC － JEITA － TOSHIBA 2-3S1C Weight: 0.01 g (typ.) Note1: Mounted on FR4 board (glass epoxy; 645 mm2,1.6 mm thick; Cu area: 645 mm2) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of c...