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TPCF8105

Field Effect Transistor

Description

TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8105 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth ...

Toshiba

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