DatasheetsPDF.com

TPCA8A10-H Dataheets PDF



Part Number TPCA8A10-H
Manufacturers Toshiba
Logo Toshiba
Description Field Effect Transistor
Datasheet TPCA8A10-H DatasheetTPCA8A10-H Datasheet (PDF)

TPCA8A10-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A10-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3.

  TPCA8A10-H   TPCA8A10-H



Document
TPCA8A10-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A10-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-06-19 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TPCA8A10-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 40 120 58 2.8 1.6 208 40 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 2.15 44.6 78.1 Unit /W /W /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.1 mH, RG = 1 Ω, IAR = 40 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2011-06-19 Rev.1.0 Free Datasheet http://www.datasheet4u.com/ TPCA8A10-H 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±20 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS =.


TPCA8A04-H TPCA8A10-H TPCC8093


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)