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TPC8126 Dataheets PDF



Part Number TPC8126
Manufacturers Toshiba
Logo Toshiba
Description MOSFET
Datasheet TPC8126 DatasheetTPC8126 Datasheet (PDF)

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 .

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