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TPC8127

Toshiba
Part Number TPC8127
Manufacturer Toshiba
Description MOSFET
Published Nov 11, 2013
Detailed Description TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Po...
Datasheet PDF File TPC8127 PDF File

TPC8127
TPC8127

Overview
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −13 −52 1.
9 1.
0 110 −13 150 −55 to 150 Unit V V V A W W mJ A °C °C Pulse (No...


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