TPC8053-H

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8053-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg 60 V 60 V ±20 V 9 A 36 1.9 W 1.0 W 29 mJ 9 A 0.06 mJ 150 °C −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.085g (typ.) Circuit Configuration 8765 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high 1234 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the o...