TPC8053-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8053-H
Switching Regulator Applicati...
TPC8053-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8053-H
Switching
Regulator Applications Motor Drive Applications DC-DC Converter Applications
Unit: mm
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance:
RDS (ON) = 14.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation
(t = 10 s) (Note 2a)
Drain power dissipation
(t = 10 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
PD
EAS IAR EAR Tch Tstg
60
V
60
V
±20
V
9 A
36
1.9
W
1.0
W
29
mJ
9
A
0.06
mJ
150
°C
−55 to 150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the o...