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TPC6012

Toshiba
Part Number TPC6012
Manufacturer Toshiba
Description N-Channel MOSFET
Published Nov 11, 2013
Detailed Description TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable E...
Datasheet PDF File TPC6012 PDF File

TPC6012
TPC6012

Overview
TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPC6012 Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 20 20 ± 12 6 24 2.
2 0.
7 2.
3 3 150 −55 to 150 Unit V V V...


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