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TPC6109-H

Part Number	TPC6109-H
Manufacturer	Toshiba
Description	P-Channel MOSFET
Published	Nov 11, 2013
Detailed Description	TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficie...
Datasheet	TPC6109-H PDF File

Overview

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.
) (VDS = −10 V) High forward transfer admittance: |Yfs| = 8.
0 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 3) Symbol VDSS VDGR VGSS ID IDP PD PD EAS ...

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TPC6109-H P-Channel MOSFET - Toshiba

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