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TK32E12N1

Toshiba
Part Number TK32E12N1
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Features (1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (V...
Published Nov 11, 2013
Datasheet PDF File TK32E12N1 PDF File


TK32E12N1
TK32E12N1

Features
(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK32E12N1 1: Ga...


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