MOSFETs Silicon N-channel MOS (U-MOS)
TK100F04K3
1. Applications
• Switching Voltage Regulators • DC-DC Converters • Mo...
MOSFETs Silicon N-channel MOS (U-MOS)
TK100F04K3
1. Applications
Switching Voltage
Regulators DC-DC Converters Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK100F04K3
TO-220SM(W)
1: Gate 2: Drain (Heatsink) 3: Source
©2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2008-03
2020-06-12 Rev.2.0
TK100F04K3
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Drain-gate voltage
(RGS = 20kΩ)
VDGR
40
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
100
A
Drain current (pulsed)
(Note 1)
IDP
300
Single-pulse avalanche energy
(Note 2)
EAS
125
mJ
Power dissipation
(Tc = 25)
PD
180
W
Avalanche current
IAR
100
A
Repetitive avalanche energy
(Note 3)
EAR
18
mJ
Channel temperature
(Note 4)
Tch
175
Storage temperature
(Note 4)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati...