2N4296 2N4298 2N4299
SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICO...
2N4296 2N4298 2N4299
SILICON
NPN POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon
NPN power
transistors designed for power amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC
2N4296 2N4298 2N4299 350 500 350 250 350 250 4.0 1.0 250 20 -65 to +175 7.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N4296
2N4298
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=150V, VBE=1.5V, TC=135°C
- 600
- 600
ICBO
VCB=350V
- 100
--
ICBO
VCB=500V
--
- 100
IEBO
VBE=4.0V
- 100
- 100
BVCEO
IC=50mA
200 -
350 -
VCE(SAT) IC=50mA, IB=5.0mA
- 0.9
- 0.9
VBE(SAT) IC=50mA, IB=5.0mA
- 1.5
- 1.5
VBE(ON)
VCE=10V, IC=100mA
- 0.9
- 0.9
hFE VCE=10V, IC=5.0mA
35 -
20 -
hFE VCE=10V, IC=50mA
50 150 25 75
hFE VCE=10V, IC=100mA
35 -
20 -
fT
VCE=10V, IC=20mA, f=5.0MHz
20 -
20 -
Ccb
VCB=100V, IC=0, f=0.1 to 1.0MHz
- 6.0
- 6.0
ton
VCC=100V, IC=100mA, IB1=IB2=10mA
- 7.0
- 7.0
toff
VCC=200V, IC=100mA, IB1=IB2=10mA
- 10
- 10
IS/b VCE=200V
75 -
75 -
2N4299 MIN MAX
- 600 - 100 -- 100 250 - 0.75 - 1.5 - 0.9 35 50 150 35 20 - 6.0 - 7.0 - 10 75 -
UNITS V V V A m...