TJ60S06M3L

MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S06M3L 1. Applications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.6 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ60S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-03 1 2014-11-26 Rev.5.0 TJ60S06M3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -60 A Drain current (pulsed) (Note 1) IDP -120 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 132 mJ Avalanche current IAR -60 A Channel temperature (Note 3) Tch 175  Storage temperature (Note 3) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Hand...