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TJ20S04M3L

Toshiba
Part Number TJ20S04M3L
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TJ20S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Swit...
Datasheet PDF File TJ20S04M3L PDF File

TJ20S04M3L
TJ20S04M3L

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TJ20S04M3L 1.
Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TJ20S04M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-03 2020-06-24 Rev.
7.
0 TJ20S04M3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbo...


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