RN2970FS,RN2971FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN297...
RN2970FS,RN2971FS
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (Bias Resistor built-in
Transistor)
RN2970FS,RN2971FS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05 0.1±0.05 0.8±0.05 0.1±0.05 0.15±0.05
Unit: mm
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a
transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Complementary to RN1970FS, RN1971FS
0.7±0.05
Two devices are incorporated into a fine pitch Small Mold (6 pin) package.
1 2 3
6 5 4 0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
+0.02 0.48 -0.04
B
R1
fS6
JEDEC
E
1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1
(E1) (E2) (B2) (C2) (B1) (C1)
― ― 2-1F1C
JEITA TOSHIBA
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
6 5 4
Q1
Q2
1
2
3
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating...