RN2968FS

RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm 0.35 0.35 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. 0.7±0.05 package. 1 2 3 6 5 4 0.1±0.05 Complementary to RN1967FS~RN1969FS +0.02 0.48 -0.04 Equivalent Circuit and Bias Resistor Values C Type No. RN2967FS RN2968FS R2 RN2969FS E R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 B R1 fS6 JEDEC JEITA 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1 (E1) (E2) (B2) (C2) (B1) (C1) ― ― 2-1F1C TOSHIBA Weight: 0.001 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit Characteristics Collector-base voltage Collector-emitter voltage RN2967FS~ RN2969FS RN2967FS Emitter-base voltage RN2968FS RN2969FS Collector current Collector power dissipation Junction temperature Storage temperature range RN2967FS~ RN2969FS IC PC (Note 1) Tj Tstg VEBO Symbol VCBO VCEO Rating −20 −20 −6 −7 −15 −50 50 150 −55~150 mA mW °C °C 1 2 3 V Q1 Q2 Unit V V 6 5 4 (top view) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significant...