RN2968CT

RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.15±0.03 0.2±0.03 Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.9±0.05 ６ ５ ４ 0.6±0.02 package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Complementary to RN1967CT to RN1969CT １ 0.2±0.03 ２ ３ 0.35±0.02 0.35±0.02 0.075±0.03 0.7±0.03 Equivalent Circuit and Bias Resistor Values C Type No. RN2967 CT RN2968 CT R2 RN2969 CT E R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 CST6 6.COLLECTOR1 B R1 JEDEC JEITA TOSHIBA ― ― 2-1K1A Weight: 1.0 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit Characteristics Collector-base voltage Collector-emitter voltage RN2967CT to RN2969CT RN2967CT Emitter-base voltage RN2968CT RN2969CT Collector current Collector power dissipation Junction temperature Storage temperature range RN2967CT to RN2969CT IC PC (Note1) Tj Tstg VEBO Symbol VCBO VCEO Rating −20 −20 −6 −7 −15 −50 50 150 −55 to 150 mA mW °C °C 1 2 3 V Q1 Unit V V 6 5 4 Q2 (top view) Note 1: Total rating Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the si...