2N4261

Data Sheet No. 2N4261 Type 2N4261 Geometry 0014 Polarity PNP Qual Level: JAN - JANS Features: Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using the 0014 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/511 which Semicoa meets in all cases. Radiation graphs available. Generic Part Number: 2N4261 REF: MIL-PRF-19500/511 TO-72 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 15 15 4.5 30 -65 to +200 -65 to +200 Unit V V V mA o C C o Data Sheet No. 2N4261 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current VCE = 10 V, VEB = 0.4 V VCE = 10 V, VEB = 2.0 V o VCE = 10 V, VEB = 2.0 V, TA = +150 C Base Cutoff Current VCE = 10 V, VEB = 2.0 V Emitter-Base Cutoff Current VEB = 4.5 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 ICEX3 IBEX IEBO Min 15 15 4.5 ----------- Max ------50 5.0 5.0 5.0 10 Unit V V V nA nA µA nA µA ON Characteristics Forward current Transfer Ratio IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V, pulsed IC = 30 mA, VCE = 1.0 V pulsed o IC = 10 mA, VCE = 1.0 V, TA = -55 C Collector-E...